 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5883 2N5884 DESCRIPTION With TO-3 package Complement to type 2N5885 2N5886 High power dissipations APPLICATIONS They are intended for use in power linear and switching applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL VCBO PARAMETER CONDITIONS 2N5883 Collector-base voltage 2N5884 VCEO VEBO IC ICM IB PD Tj Tstg ANG INCH Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature 2N5883 2N5884 EMIC ES Open emitter Open base Open collector OND TOR UC VALUE -60 -80 -60 -80 -5 -25 -50 -7.5 UNIT V V V A A A W ae ae TC=25ae 200 200 -65~200 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 0.875 UNIT ae /W Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5883 2N5884 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2N5883 IC=-0.2A ;IB=0 2N5884 IC=-15A; IB=-1.5A IC=-25A ;IB=-6.25A IC=-25A ;IB=-6.25A IC=-10A ; VCE=-4V VCB=ratedVCBO; IB=0 2N5883 ICEO Collector cut-off current VCE=-30V; IB=0 -2 VCE=-40V; IB=0 VCE=ratedVCEO; mA -80 -1 -4 -2.5 -1.5 -1 V V V V mA CONDITIONS MIN -60 V TYP. MAX UNIT SYMBOL VCEO(SUS) Collector-emitter sustaining voltage VCEsat-1 VCEsat-2 VBEsat VBE ICBO Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Collector cut-off current ICEV Collector cut-off current (VBE(off)=1.5V) 2N5884 VCE=ratedVCEO; TC=150ae IEBO hFE-1 hFE-2 hFE-3 fT Ccb Emitter cut-off current DC current gain DC current gain DC current gain ANG INCH SEM E VEB=-5V; IC=0 OND IC 35 20 4 4 TOR UC -1 -10 -1 100 mA mA IC=-3A ; VCE=-V IC=-10A ; VCE=-4V IC=-25A ; VCE=-4V Trainsistion frequency Collector base capacitance IC=-1A ; VCE=-10V;f=1MHz IE=0; VCB=-10V;f=1MHz MHz 500 pF Switching times tr ts tf Rise time Storage time Fall time IC=-10A ;IB1=- IB2=-1A VCC=-30V 0.7 1.0 0.8 |I |I |I s s s 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2N5883 2N5884 SEM GE HAN INC OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.10mm) 3 |
Price & Availability of 2N5883
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |